Electrochemical Tantalum Oxide for Resistive Switching Memories-Reference-Cited by-同舟云学术

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Electrochemical Tantalum Oxide for Resistive Switching Memories

Published:2017-10-06 Issue:43 Volume:29 Page:1703357
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zaffora Andrea¹,Cho Deok-Yong²,Lee Kug-Seung³,Di Quarto Francesco¹,Waser Rainer⁴⁵,Santamaria Monica¹,Valov Ilia⁴⁵^ORCID

Affiliation:

1. Electrochemical Materials Science Laboratory; DICAM; Palermo University; Palermo 90128 Italy

2. IPIT and Department of Physics; Chonbuk National University; Jeonju 54896 South Korea

3. Pohang Accelerator Laboratory; Pohang 37673 South Korea

4. Institut für Werkstoffe der Elektrotechnik 2; RWTH Aachen University; 52074 Aachen Germany

5. Peter Grünberg Institute; Forschungszentrum Jülich; 52425 Jülich Germany

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference50 articles.

1. Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

2. Nanoionics-based resistive switching memories

3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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