Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation-Reference-Cited by-同舟云学术

Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation

Published:2021 Issue:9 Volume:9 Page:3177-3182
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Rong¹²³⁴⁵^ORCID,Xu Jianxing¹²³⁴⁵,Zhang Shiyong¹²³⁴⁵,Zhang Ying¹²³⁴⁵,Zheng Penghui¹²³⁴⁵,Cheng Zhe⁶⁷⁸⁵⁹,Zhang Lian⁶⁷⁸⁵⁹,Chen Feng-Xiang¹⁰¹¹¹²¹³⁵,Tong Xiaodong¹²³⁴⁵,Zhang Yun⁶⁷⁸⁵⁹,Tan Wei¹²³⁴⁵

Affiliation:

1. Microsystem and Terahertz Research Center

2. Institute of Electronic Engineering

3. China Academy of Engineering Physics

4. Chengdu 610200

5. China

6. Institute of Semiconductors

7. Chinese Academy of Sciences

8. Beijing 100083

9. University of Chinese Academy of Sciences

10. Department of physics

11. School of Science

12. Wuhan University of Technology

13. Wuhan 430070

Abstract

We demonstrate that low-fluence neutron irradiation can be a promising way to reduce the reverse leakage current of AlGaN/GaN heterostructures grown by MOCVD on sapphire substrates while maintaining other electronic properties almost unchanged.

Funder

Science Challenge Project

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05652A

Reference44 articles.

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