Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors

Published:2018-10-08 Issue:15 Volume:113 Page:152104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu Ning¹²^ORCID,Hao Ronghui²³^ORCID,Chen Fu¹²^ORCID,Zhang Xiaodong²,Zhang Hui²⁴,Zhang Peipei²⁴,Ding Xiaoyu²³,Song Liang¹²,Yu Guohao²,Cheng Kai⁵,Cai Yong²,Zhang Baoshun²⁶

Affiliation:

1. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China

2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, China

3. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

4. The College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China

5. Enkris Semiconductor, Suzhou 215123, China

6. Suzhou Powerhouse Electronics Co., Ltd, Suzhou 215123, China

Funder

Key Research and Development Program of Jiangsu Province

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5041343

Reference29 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

4. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

5. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

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