Tuning the band gap and carrier concentration of titania films grown by spatial atomic layer deposition: a precursor comparison-Reference-Cited by-同舟云学术

Tuning the band gap and carrier concentration of titania films grown by spatial atomic layer deposition: a precursor comparison

Published:2021 Issue:20 Volume:3 Page:5908-5918
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Armstrong Claire¹,Delumeau Louis-Vincent²³^ORCID,Muñoz-Rojas David⁴^ORCID,Kursumovic Ahmed¹,MacManus-Driscoll Judith¹,Musselman Kevin P.²³^ORCID

Affiliation:

1. Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK

2. Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Ave. West, Waterloo, Canada

3. Waterloo Institute for Nanotechnology, 200 University Ave. West, Waterloo, Canada

4. Laboratoire des Materiaux et du Genie Physique, CNRS, MINATEC, 3 Parvis Louis Neel, Grenoble, 38016, France

Abstract

Titanium isopropoxide and tetrachloride precursors are compared with SALD. The effects of Cl contamination on TiO2's growth (agglomeration) and band gap (decrease) are reported before demonstrating the TiO2's performance in a photovoltaic device.

Funder

H2020 European Research Council

Girton College, University of Cambridge

University of Cambridge

Royal Academy of Engineering

Marie Curie

European Social Fund

Ontario Ministry of Economic Development, Job Creation and Trade

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NA/D1NA00563D

Reference62 articles.

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3. Atomic layer deposition (ALD): from precursors to thin film structures

4. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

5. Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition

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