Thermal stability of HfO2-on-GaAs nanopatterns
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2012/NR/C2NR30190C
Reference15 articles.
1. Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology
2. Nanoscale Selective Plasma Etching of Ultrathin HfO2Layers on GaAs for Advanced Complementary Metal–Oxide–Semiconductor Devices
3. Nanostructuring of Ultra-Thin HfO2 Layers for High-k/III–V Device Application
4. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application
5. Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition
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1. High temperature sintering induced acetone gas sensing properties of sol-gel synthesized HfO2 nanocrystals;Journal of Sol-Gel Science and Technology;2022-07-13
2. Mesostructured HfO2/Al2O3 Composite Thin Films with Reduced Leakage Current for Ion-Conducting Devices;ACS Omega;2019-08-30
3. Reliability study of high-κ La2O3/HfO2and HfO2/La2O3stacking layers on n-In0.53Ga0.47As metal–oxide–semiconductor capacitor;Applied Physics Express;2016-01-22
4. Crystallization of HfO2in InAs/HfO2core–shell nanowires;Nanotechnology;2014-09-11
5. Control of the interfacial reaction in HfO2 on Si-passivated GaAs;Applied Surface Science;2013-10
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