Reliability study of high-κ La2O3/HfO2and HfO2/La2O3stacking layers on n-In0.53Ga0.47As metal–oxide–semiconductor capacitor-Reference-Cited by-同舟云学术

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Reliability study of high-κ La2O3/HfO2and HfO2/La2O3stacking layers on n-In0.53Ga0.47As metal–oxide–semiconductor capacitor

Published:2016-01-22 Issue:2 Volume:9 Page:021203
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Chu Chung-Ming,Lin Yueh-Chin,Lee Wei-I,Dee Chang Fu,Wong Yuen-Yee,Majlis Burhanuddin Yeop,Salleh Muhamad Mat,Yap Seong Ling,Chang Edward Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/9/i=2/a=021203/pdf

Reference22 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Properties of HfO2/La2O3nanolaminate films grown on an AlGaN/GaN heterostructure by plasma enhanced atomic layer deposition

3. Nano-Cmos Gate Dielectric Engineering

4. InGaAs MOSFETs for CMOS: Recent advances in process technology

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1. Enhanced Electrical Properties of Atomic Layer Deposited LaxAlyO Thin Films with Stress Relieved Preoxide Pretreatment;Materials;2018-09-03

2. Vaporization and thermodynamic properties of lanthanum hafnate;Journal of Alloys and Compounds;2018-02

3. The influence of La/Al atomic ratio on the dielectric constant and band-gap of stack-gate La–Al–O/SiO2 structure;Journal of Materials Science: Materials in Electronics;2016-11-10

4. The performance of Y2O3 as interface layer between La2O3 and p-type silicon substrate;AIP Advances;2016-11

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