Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices-Reference-Cited by-同舟云学术

Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

Published:2017 Issue:29 Volume:7 Page:17882-17888
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Kim Sungjun¹²³⁴⁵^ORCID,Chang Yao-Feng⁶⁷⁸⁹^ORCID,Park Byung-Gook¹²³⁴⁵^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering

2. Inter-University Semiconductor Research Center (ISRC)

3. Seoul National University

4. Seoul 08826

5. South Korea

6. Microelectronics Research Center

7. The University of Texas at Austin

8. Austin

9. USA

Abstract

Two resistive memory devices were prepared with different doping concentrations in the silicon bottom electrodes to explore the self-rectifying and nonlinear resistive switching characteristics of Ni/SiN_x/p-Si devices.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C6RA28477A

Reference58 articles.

1. Three-Dimensional NAND Flash Memory Based on Single-Crystalline Channel Stacked Array

2. Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area

3. HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

4. Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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