Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area-Reference-Cited by-同舟云学术

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area

Published:2016-07-07 Issue:28 Volume:8 Page:18215-18221
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yoon Jung Ho¹,Yoo Sijung¹,Song Seul Ji¹,Yoon Kyung Jean¹,Kwon Dae Eun¹,Kwon Young Jae¹,Park Tae Hyung¹,Kim Hye Jin¹,Shao Xing Long¹,Kim Yumin¹,Hwang Cheol Seong¹

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b05657

Reference14 articles.

1. Realization of vertical resistive memory (VRRAM) using cost effective 3D process

2. Three-Dimensional $\hbox{4F}^{2}$ ReRAM With Vertical BJT Driver by CMOS Logic Compatible Process

3. Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode

4. Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-Point Array Applications

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