Nanoscale (∼10nm) 3D vertical ReRAM and NbO<inf>2</inf> threshold selector with TiN electrode-Reference-Cited by-同舟云学术

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Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Cha Euijun,Woo Jiyong,Lee Daeseok,Lee Sangheon,Song Jeonghwan,Koo Yunmo,Lee Jihyun,Park Chan Gyung,Yang Moon Young,Kamiya Katsumasa,Shiraishi Kenji,Magyari-Kope Blanka,Nishi Yoshio,Hwang Hyunsang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724602.pdf?arnumber=6724602

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