Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

Author:

Pyo Juyeong1,Bae Jong-Ho2ORCID,Kim Sungjun1,Cho Seongjae3ORCID

Affiliation:

1. Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea

2. School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of Korea

3. Department of Electronics Engineering, Gachon University, Seongnam 13120, Republic of Korea

Abstract

A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlOx and CeOx layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation. The excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD) of the synaptic devices were realized for the short-term memory behaviors. The IGZO-based three-terminal synaptic transistor could thus be controlled appropriately by the amplitude, width, and interval time of the pulses for implementing the neuromorphic systems.

Funder

the National R&D Program

Publisher

MDPI AG

Subject

General Materials Science

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