A TCAD Model for Silicon Nitride Based Memristive Devices-Reference-Cited by-同舟云学术

A TCAD Model for Silicon Nitride Based Memristive Devices

Published:2023-07-02 Issue: Volume: Page:
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Container-title:2023 IEEE 23rd International Conference on Nanotechnology (NANO)
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Author:

Stavroulakis Emmanouil¹,Vasileiadis Nikolaos¹,Mavropoulis Alexandros²,Chatzipaschalis Ioannis K.¹,Tsipas Evangelos¹,Rallis Konstantinos¹,Vourkas Ioannis³,Dimitrakis Panagiotis²,Sirakoulis Georgios Ch.¹

Affiliation:

1. Democritus University of Thrace,Department of Electrical and Computer Engineering,Xanthi,Greece

2. Institute of Nanoscience and Nanotechnology, NCSR “Demokritos”,Athens,Greece

3. Universidad Técnica Federico Santa María,Dept. of Electronic Engineering,Valparaíso,Chile

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10231127/10231154/10231233.pdf?arnumber=10231233

Reference29 articles.

1. Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

2. Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

3. Physics of the Switching Kinetics in Resistive Memories

4. Effect of SOI substrate on silicon nitride resistance switching using MIS structure

5. In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor

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