Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications-Reference-Cited by-同舟云学术

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

Published:2015-05-25 Issue:21 Volume:106 Page:212106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Sungjun¹^ORCID,Jung Sunghun¹,Kim Min-Hwi¹,Cho Seongjae²,Park Byung-Gook¹

Affiliation:

1. Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, South Korea

2. Department of Electronic Engineering, Gachon University, Gyeonggi-do 461-701, South Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921926

Reference24 articles.

1. Rapid-turnaround characterization methods for MRAM development

2. Phase-change random access memory: A scalable technology

3. Nanoionics-based resistive switching memories

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