Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile

Author:

Yim Jihong1ORCID,Verkama Emma1ORCID,Velasco Jorge A.1ORCID,Arts Karsten2ORCID,Puurunen Riikka L.1ORCID

Affiliation:

1. Department of Chemical and Metallurgical Engineering, Aalto University, P.O. Box 16100, FI-00076 AALTO, Finland

2. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

Abstract

We simulated thickness profiles of atomic layer deposited thin films by a diffusion–reaction model in two flow regimes. The thickness profiles were affected by process parameters such as density of film, sticking coefficient, and growth per cycle.

Funder

Academy of Finland

Aalto-Yliopisto

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference54 articles.

1. Atomic layer epitaxy

2. Atomic Layer Deposition: An Overview

3. J. R.van Ommen , A.Goulas and R. L.Puurunen , Atomic layer deposition , Kirk-Othmer Encyclopedia of Chemical Technology , John Wiley & Sons, Inc , 2021

4. Conformality in atomic layer deposition: Current status overview of analysis and modelling

5. Multiscale Modeling in Chemical Vapor Deposition Processes: Models and Methodologies

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