Electric field induced simultaneous change of resistance and magnetization in an Ag/Ti/Fe3O4/Pt device
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2013/TC/C3TC31779J
Reference23 articles.
1. Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
2. Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing
3. A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures
4. Reproducible resistance switching in polycrystalline NiO films
5. Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes
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