Resistive memory device with piezoelectric and ferroelectric thin films by solution synthesis
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Elsevier
Reference117 articles.
1. Resistive random access memory: a review of device challenges;Gupta;IETE Tech. Rev.,2019
2. Bipolar and unipolar resistive switching in Cu-doped SiO2;Schindler;IEEE Trans. Electron Devices,2007
3. Nonpolar nonvolatile resistive switching in Cu doped ZrO2;Guan;IEEE Electron Device Lett.,2008
4. Resistive switching phenomena: a review of statistical physics approaches;Lee;Appl. Phys. Rev.,2015
5. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures;Lee;Nat. Mater.,2011
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