Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2945278
Reference18 articles.
1. TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching
2. Resistive Switching Mechanism in $\hbox{Zn}_{x}\hbox{Cd}_{1 - x}\hbox{S}$ Nonvolatile Memory Devices
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