Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing-Reference-Cited by-同舟云学术

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Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing

Published:2010-05-31 Issue:22 Volume:96 Page:222108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Feng Li-Wei,Chang Chun-Yen,Chang Yao-Feng,Chang Ting-Chang,Wang Shin-Yuan,Chen Shih-Ching,Lin Chao-Cheng,Chen Shih-Cheng,Chiang Pei-Wei

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3428777

Reference17 articles.

1. Nanoscale Memory Elements Based on Solid-State Electrolytes

2. Quantized conductance atomic switch

3. Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals

4. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

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