Multilevel resistive switching memory behaviors arising from ion diffusion and photoelectron transfer in α-Fe2O3 nano-island arrays
Author:
Affiliation:
1. College of Resources and Environment
2. Southwest University
3. Chongqing
4. China
5. School of Artificial Intelligence
Abstract
Resistive switching (RS) memory behaviors are observed in an Ag|α-Fe2O3|Ti device after operating under an ultralow bias voltage of ±0.1 V.
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2020/CP/C9CP06392G
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