Physical mechanism for the synapse behaviour of WTiOx-based memristors
Author:
Affiliation:
1. State Key Laboratory on Integrated Optoelectronics
2. Institute of Semiconductors
3. Chinese Academy of Sciences
4. Beijing 100083
5. People's Republic of China
Abstract
Tungsten-based memristors possess gradually changing resistance and suddenly changing resistance under different conditions. The devices have great potential in simulating neuronal synapses and computational storage.
Funder
National Natural Science Foundation of China
National Basic Research Program of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP05060D
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