Forming-Free Pt/Ti/AlOx/CeOx/Pt Multilayer Memristors with Multistate and Synaptic Characteristics

Abstract

Due to their unique electrical performance and simple structure, memristors exhibit excellent application prospects for future information technology. In this work, we fabricated Pt/Ti/AlOx/CeOx/Pt memristors demonstrating electroforming-free bipolar resistive switching behavior with low operating voltage (−1 to 1 V), stable endurance, and retention. Space-charge limited conduction (SCLC) as well as the formation and rupture of conductive filaments are responsible for the resistive switching behavior. Increasing the magnitude of the RESET voltage could generate multistate resistive switching. We studied the synaptic characteristics of the device by obtaining multilevel conductance states and investigating the relationship between the device resistance, pulse amplitude, pulse width, and pulse number. By applying programmed pre and postsynaptic spiking pulses, spike-timing dependent plasticity was observed. This study shows that the device is suitable for multivalue storage and can be used as an electronic synapse device in artificial neural networks.