Unlocking the potential of effect of gamma irradiation on α-Fe2O3 nanoparticles for high-performance resistive switching applications-Reference-Cited by-同舟云学术

Unlocking the potential of effect of gamma irradiation on α-Fe2O3 nanoparticles for high-performance resistive switching applications

Published:2024-06 Issue: Volume:176 Page:108298
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Shinde Shital J.,Waikar Maqsood R.,Gurav Sunny R.,Patil Snehal L.,Ghongade Satyashila D.,Bagwan Azeem M.,Sonkawade Aniket R.,Sonker Rakesh K.,Kamat Rajanish K.,Dongale Tukaram D.,Sonkawade Rajendra G.

Funder

Chhatrapati Shahu Maharaj Research Training and Human Development Institute

Publisher

Elsevier BV

Reference65 articles.

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5. Multilevel resistive switching memory behaviors arising from ion diffusion and photoelectron transfer in α-Fe2O3 nano-island arrays;Ren;Phys. Chem. Chem. Phys.,2020

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