Large electric-field-induced magnetization change in Fe3O4 thin film based on resistance switching effect-Reference-Cited by-同舟云学术

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Large electric-field-induced magnetization change in Fe3O4 thin film based on resistance switching effect

Published:2021-11 Issue: Volume:538 Page:168265
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Ren Jun,Li Junming,Zhang Sheng,Li Jun,Su Wenxia,Wang Dunhui,Cao Qingqi,Du Youwei

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Spintronics based random access memory: a review;Bhatti;Mater. Today,2017

2. The emergence of spin electronics in data storage;Chappert;Nat. Mater.,2007

3. Towards the Development of Flexible Non-Volatile Memories;Han;Adv. Mater.,2013

4. Nanoionics-based resistive switching memories;Waser;Nat. Mater.,2007

5. Multiferroics: Towards a magnetoelectric memory;Bibes;Nat. Mater.,2008

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