Defect formation mechanism and quality improvement of InAlN epilayers grown by metal–organic chemical vapor deposition
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/CE/C5CE01401H
Reference23 articles.
1. The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2. Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD
3. AlInN-based ultraviolet photodiode grown by metal organic chemical vapor deposition
4. Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications
5. Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy
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1. A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation;CrystEngComm;2020
2. Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer;Applied Surface Science;2019-03
3. Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier;Solid-State Electronics;2019-02
4. Effect of Growth Time on Thickness of InAlN/GaN Heterostructures Grown by MOCVD;Springer Proceedings in Physics;2019
5. Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT;physica status solidi (a);2018-04-03
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