Effect of Growth Time on Thickness of InAlN/GaN Heterostructures Grown by MOCVD
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-97604-4_39
Reference12 articles.
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3. M. Hiroki, N. Maeda, T. Kobayashi, Fabrication of an InAlN/AlGaN/AlN/GaN heterostructure with a flat surface and high electron mobility. Appl. Phys. Express 1, 111102 (2008)
4. R. Butte, J.F. Carlin, E. Feltin, M. Gonschorek, S. Nicolay, G. Christmann, D. Simeonov, A. Castiglia, J. Dorsaz, H.J. Buehlmann, S. Christopoulos, G.B.H. von Hogersthal, A.J.D. Grundy, M. Mosca, C. Pinquier, M.A. Py, F. Demangeot, J. Grandon, P.G. Lagoudakis, J.J. Baumberg, N. Grandjen, Current status of AlInN layers lattice-matched to GaN for photonics and electronics. J. Phys. D Appl. Phys. 40, 6328 (2007)
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