Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer
Author:
Funder
Slovak Agency
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference55 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
3. Proposal of High-Electron Mobility Transistors With Strained InN Channel
4. N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors
5. Proposal of normally-off InN-channel high-electron mobility transistors
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