Proposal of normally-off InN-channel high-electron mobility transistors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/29/i=3/a=035015/pdf
Reference19 articles.
1. Beyond the AlGaN/GaN HEMT: new concepts for high-speed transistors
2. Transient electron transport in wurtzite GaN, InN, and AlN
3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
4. Proposal of High-Electron Mobility Transistors With Strained InN Channel
5. N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors
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1. Electron transport properties in thin InN layers grown on InAlN;Materials Science in Semiconductor Processing;2023-03
2. Unravelling the adsorption performance of BN, AlN, GaN and InN 2D nanosheets towards the ciclopirox, 5-fluorouracil and nitrosourea for anticancer drug delivery motive: A DFT-D with QTAIM, PCM and COSMO investigations;Computational and Theoretical Chemistry;2022-08
3. InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures;Semiconductor Science and Technology;2021-06-23
4. Dielectric Modulated Enhancement Mode N-Polar GaN MIS-HEMT Biosensor for Label Free Detection;ECS Journal of Solid State Science and Technology;2021-03-01
5. Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer;Applied Surface Science;2019-03
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