A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation-Reference-Cited by-同舟云学术

A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation

Published:2020 Issue:1 Volume:22 Page:130-141
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Chauhan Prerna¹²³⁴^ORCID,Hasenöhrl S.¹²³⁴,Vančo Ľ.⁵⁶⁷⁴,Šiffalovič P.⁸²³⁴^ORCID,Dobročka E.¹²³⁴,Machajdík D.¹²³⁴⁹,Rosová A.¹²³⁴^ORCID,Gucmann F.¹⁰¹¹¹²¹³,Kováč J.¹⁴³⁴,Maťko I.⁸²³⁴,Kuball M.¹⁰¹¹¹²¹³,Kuzmík J.¹²³⁴

Affiliation:

1. Institute of Electrical Engineering

2. Slovak Academy of Sciences

3. Bratislava

4. Slovakia

5. Slovak University of Technology

6. Univ. Sci. Park Bratislava Centre

7. 812 43 Bratislava

8. Institute of Physics

9. Joint Institute for Nuclear Research

10. Center for Device Thermography and Reliability

11. University of Bristol

12. Bristol BS8 1TL

13. UK

14. International Laser Centre

Abstract

Thick InAlN layers (In-molar fraction >0.37) on GaN buffer layers were prepared using a close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor.

Funder

Agentúra na Podporu Výskumu a Vývoja

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/C9CE01549C

Reference27 articles.

1. Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer

2. Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

3. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

4. Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors

5. Growth by MOCVD of In(Ga)AlN alloys, and a study of gallium contamination in these layers under nitrogen and hydrogen carrier gas

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1. Effects of growth temperature on structural and electrical properties of in-rich InAlN–GaN heterostructures by radio-frequency metal–organic molecular beam epitaxy;Surface Topography: Metrology and Properties;2023-04-27

2. InAl(Ga)N: MOCVD thermodynamics and strain distribution;Journal of Alloys and Compounds;2022-02