Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD-Reference-Cited by-同舟云学术

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Published:2019-03-14 Issue:10 Volume:125 Page:105304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chauhan P.¹^ORCID,Hasenöhrl S.¹,Dobročka E.¹,Chauvat M. P.²,Minj A.²,Gucmann F.³^ORCID,Vančo Ľ.⁴,Kováč J.⁵,Kret S.⁶^ORCID,Ruterana P.²^ORCID,Kuball M.³^ORCID,Šiffalovič P.⁷^ORCID,Kuzmík J.¹

Affiliation:

1. Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia

2. CIMAP, UMR 6252 CNRS, 6 Boulevard Maréchal Juin, 14050 Caen, France

3. Center for Device Thermography and Reliability, University of Bristol, Bristol BS8 1TL, UK

4. University Science Park Bratislava Centre, Slovak University of Technology, Vazovova 5, 812 43 Bratislava, Slovakia

5. International Laser Centre, Ilkovičova 3, Bratislava, Slovakia

6. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

7. Institute of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, 845 11 Bratislava 45, Slovak Republic

Funder

Agentúra na Podporu Výskumu a Vývoja

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5079756

Reference65 articles.

1. Band Gap of Hexagonal InN and InGaN Alloys

2. Seeded growth of AlN bulk crystals in m- and c-orientation

3. Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

4. Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation

5. Rietveld refinement for indium nitride in the 105–295 K range

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