A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD
Author:
Affiliation:
1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics
2. School of Physics
3. Peking University
4. Beijing 100871
5. China
6. Dongguan Institute of Optoelectronics
7. Dongguan
Abstract
A study of GaN nucleation and coalescence behaviors in the initial growth stages on nanoscale patterned sapphire substrates (NPSS) is presented.
Funder
National Natural Science Foundation of China
Beijing Municipal Science and Technology Commission
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/CE/C8CE01450G
Reference44 articles.
1. Low-dislocation-density GaN from a single growth on a textured substrate
2. Surface evolution and effect of V/III ratio modulation on etch-pit-density improvement of thin AlN templates on nano-patterned sapphire substrates by metalorganic chemical vapor deposition
3. Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates
4. Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
5. InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate
Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors;Materials Science in Semiconductor Processing;2024-03
2. Comparative study of epitaxial growth and Ni/GaN Schottky device on patterned sapphire substrates;CrystEngComm;2024
3. Effect of grain coalescence on dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates;CrystEngComm;2024
4. Visible–ultraviolet dual-band photodetectors based on an all-inorganic CsPbCl3/p-GaN heterostructure;Nanoscale Advances;2024
5. UV–visible dual-band photodetector based on an all-inorganic Mn-doped CsPbCl3/GaN type-II heterojunction;Applied Physics Letters;2023-12-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3