Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates-Reference-Cited by-同舟云学术

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Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

Published:2016-07 Issue: Volume:375 Page:223-229
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lee Fang-Wei,Ke Wen-Cheng,Cheng Chun-Hong,Liao Bo-Wei,Chen Wei-Kuo

Funder

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Characterization of threading dislocations in GaN epitaxial layers

3. Research challenges to ultra-efficient inorganic solid-state lighting

4. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

5. Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

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1. Application of patterned sapphire substrate for III-nitride light-emitting diodes;Nanoscale;2022

2. Perspectives on UVC LED: Its Progress and Application;Photonics;2021-05-31

3. Nitrogen doped ultrananocrystalline diamond conductive layer grown on InGaN-based light-emitting diodes using nanopattern enhanced nucleation;Applied Surface Science;2021-04

4. MicroLED technologies and applications: characteristics, fabrication, progress, and challenges;Journal of Physics D: Applied Physics;2021-01-15

5. Patterned sapphire substrates cause a wavelength shift of green InGaN light-emitting diodes;Optical Materials Express;2020-08-03

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