Low-dislocation-density GaN from a single growth on a textured substrate-Reference-Cited by-同舟云学术

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Low-dislocation-density GaN from a single growth on a textured substrate

Published:2000-11-13 Issue:20 Volume:77 Page:3233-3235
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ashby Carol I. H.,Mitchell Christine C.,Han Jung,Missert Nancy A.,Provencio Paula P.,Follstaedt David M.,Peake Gregory M.,Griego Leonardo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1325394

Reference15 articles.

1. The role of threading dislocations in the physical properties of GaN and its alloys

2. Anisotropic epitaxial lateral growth in GaN selective area epitaxy

3. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

4. Pendeoepitaxy of gallium nitride thin films

5. Dislocation reduction in GaN thin films via lateral overgrowth from trenches

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