Resistive switching in formamidinium lead iodide perovskite nanocrystals: a contradiction to the bulk form-Reference-Cited by-同舟云学术

Resistive switching in formamidinium lead iodide perovskite nanocrystals: a contradiction to the bulk form

Published:2021 Issue:1 Volume:9 Page:288-293
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Muthu Chinnadurai¹²³⁴⁵,Resmi A. N.⁶⁷⁴,Pious Johnpaul K.¹²³⁴⁵,Dayal G.⁶⁷⁴,Krishna Nayana¹²³⁴,Jinesh K. B.⁶⁷⁴^ORCID,Vijayakumar C.¹²³⁴⁵^ORCID

Affiliation:

1. Photosciences and Photonics Section

2. CSIR-National Institute for Interdisciplinary Science and Technology (NIIST)

3. Thiruvananthapuram 695 019

4. India

5. Academy of Scientific and Innovative Research (AcSIR)

6. Department of Physics, Indian Institute of Space Science and Technology (IIST)

7. Thiruvananthapuram 695 547

Abstract

The capping ligands reduce the interaction energy between iodide vacancies leading to reversible resistive switching in α-FAPbI₃ perovskite nanocrystals.

Funder

Council of Scientific and Industrial Research, India

University Grants Commission

Department of Science and Technology, Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC03275A

Reference65 articles.

1. Towards the Development of Flexible Non-Volatile Memories

2. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

3. The missing memristor found

4. Memristive devices for computing

5. Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method

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