Effect of HBr additive on the performance of all-inorganic Cs3Bi2Br9 halide perovskite resistive switching memory-Reference-Cited by-同舟云学术

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Effect of HBr additive on the performance of all-inorganic Cs3Bi2Br9 halide perovskite resistive switching memory

Published:2023-12 Issue: Volume:968 Page:171886
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Xu Jianghua,Xu Jianping,Shi Shaobo,Bian Weihao,Chen Jing,Gao Songyao,Zhou Xue,Kong Lina,Zhang Xiaosong,Li Lan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference55 articles.

1. Design of electrodeposited bilayer structures for reliable resistive switching with self-compliance;Kim;ACS Appl. Mater. Interfaces,2016

2. Review of electrochemically synthesized resistive switching devices: memory storage, neuromorphic computing, and sensing applications;Kundale;Nanomaterials,2023

3. Organic non-volatile memory device based on cellulose fibers;Rananavare;Mater. Lett.,2018

4. Promising materials and synthesis methods for resistive switching memory devices: a status review;Kamble;ACS Appl. Electron Mater.,2023

5. Optical memory, switching, and neuromorphic functionality in metal halide perovskite materials and devices;Vats;Adv. Mater.,2023

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