Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method-Reference-Cited by-同舟云学术

Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method

Published:2014-03-25 Issue:7 Volume:6 Page:5012-5017
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hu Wei¹,Zou Lilan¹,Chen Xinman²,Qin Ni¹,Li Shuwei¹,Bao Dinghua¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, Guangdong 510275, China

2. Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou, Guangdong 510631, China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am500048y

Reference28 articles.

1. Nanoionics-based resistive switching memories

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Memristive devices for computing

4. Metal–Oxide RRAM

5. The missing memristor found

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