Electro-Optically Tunable Passivated Double-Cation Perovskite-Based ReRAM for Low-Power Memory Applications-Reference-Cited by-同舟云学术

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Electro-Optically Tunable Passivated Double-Cation Perovskite-Based ReRAM for Low-Power Memory Applications

Published:2024-03-18 Issue:4 Volume:6 Page:2709-2719
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chauhan Manvendra¹,Singh Ranbir²,Sharma Satinder K.¹^ORCID

Affiliation:

1. School of Computing & Electrical Engineering (SCEE), Indian Institute of Technology (IIT) Mandi, Mandi 175075, Himachal Pradesh, India

2. School of Mechanical and Materials Engineering (SMME), Indian Institute of Technology (IIT) Mandi, Mandi 175075, Himachal Pradesh, India

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00257

Reference58 articles.

1. Porphyrin‐Based Metal–Organic Frameworks for Neuromorphic Electronics

2. Porous crystalline materials for memories and neuromorphic computing systems

3. Interface-Dependent Ion Migration/Accumulation Controls Hysteresis in MAPbI3 Solar Cells

4. Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure

5. Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2D and Quasi-2D Halide Perovskite-Based Resistive Switching Memory Systems;Electronics;2024-09-08

2. Surface engineering of FAPbI3 based organic–inorganic hybrid perovskite for memristors;Applied Physics Letters;2024-06-24

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