CsPbI<sub>3</sub> Perovskite Quantum Dot-Based WORM Memory Device with Intrinsic Ternary States-Reference-Cited by-同舟云学术

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CsPbI₃ Perovskite Quantum Dot-Based WORM Memory Device with Intrinsic Ternary States

Published:2024-07-22 Issue:30 Volume:16 Page:39827-39834
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Xu Luhang¹,Fu Yuang¹,Li Yuhao²,Zhou Guodong³,Lu Xinhui¹^ORCID

Affiliation:

1. Department of Physics, The Chinese University of Hong Kong, New Territories, Shatin, Hong Kong SAR 999077, China

2. Spallation Neutron Source Science Center, Dongguan 523803, China

3. College of Integrated Circuits, Zhejiang University, Hangzhou 311200, China

Funder

Research Grants Council, University Grants Committee

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c07044

Reference45 articles.

1. A review of emerging non-volatile memory (NVM) technologies and applications

2. A polymer/semiconductor write-once read-many-times memory

3. Modification of OFF- and ON-Resistances of SrTiO_x WORM Memories by Thermal Annealing Processes

4. A write-once-read-many-times memory based on a sol-gel derived copper oxide semiconductor

5. Synergies of Electrochemical Metallization and Valance Change in All-Inorganic Perovskite Quantum Dots for Resistive Switching

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