Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD-Reference-Cited by-同舟云学术

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

Author:

Li J. Z.¹²³⁴,Chen Z. Z.¹²³⁴,Jiao Q. Q.¹²³⁴,Feng Y. L.¹²³⁴,Jiang S.¹²³⁴,Chen Y. F.¹²³⁴,Yu T. J.¹²³⁴,Li S. F.⁵³⁶⁷,Zhang G. Y.¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics

2. School of Physics

3. Peking University

4. Beijing 100871, People's Republic of China

5. Dongguan Institute of Optoelectronics

6. Technology & Innovation Park Songshanhu

7. Dongguan, China

Abstract

The silane-controlled 3D growth led to a high crystalline quality, much strain relaxation and a specular surface for the GaN epilayers on NPSS.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

Reference25 articles.

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