Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistor-Reference-Cited by-同舟云学术

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Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistor

Published:2020 Issue:11 Volume:8 Page:3730-3739
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Oluwabi Abayomi T.¹²³⁴⁵^ORCID,Katerski Atanas¹²³⁴⁵^ORCID,Carlos Emanuel⁶⁷⁸⁹^ORCID,Branquinho Rita⁶⁷⁸⁹^ORCID,Mere Arvo¹²³⁴⁵,Krunks Malle¹²³⁴⁵^ORCID,Fortunato Elvira⁶⁷⁸⁹^ORCID,Pereira Luis⁶⁷⁸⁹^ORCID,Oja Acik Ilona¹²³⁴⁵^ORCID

Affiliation:

1. Laboratory of Thin Film Chemical Technologies

2. Department of Materials and Environmental Technology

3. Tallinn University of Technology

4. 19086 Tallinn

5. Estonia

6. CENIMAT/i3N Nova School of Science Technilogy (FCT-NOVA)

7. Universidade NOVA de Lisboa and CEMOP/Uninova

8. 2829-516 Caparica

9. Portugal

Abstract

A typical schematic for both spray pyrolysis set-up and ZrO_x-based TFT device, and the corresponding electrical performance.

Funder

Tallinna Tehnikaülikool

European Regional Development Fund

Fundação para a Ciência e a Tecnologia

Horizon 2020 Framework Programme

Sihtasutus Archimedes

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC05127A

Reference41 articles.

1. High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric

2. P. Barquinha , R.Martins , L.Pereira and E.Fortunato , Transparent oxide electronics , United Kingdom , John Wiley and Sons , 2012

3. Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

4. Thin-Film Barrier Performance of Zirconium Oxide Using the Low-Temperature Atomic Layer Deposition Method

5. Fully Solution-Processed Low-Voltage Aqueous In2O3 Thin-Film Transistors Using an Ultrathin ZrOx Dielectric

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1. Low‐Temperature Poly‐Si Thin‐Film Transistor with High‐k ZrAlO_x Gate Insulator with SiO₂ Blocking Layer;Advanced Materials Technologies;2024-08-10

2. High quality a-InGaZnO and a-ZrAlO deposited at 375 °C by spray pyrolysis for low voltage operation TFTs;Materials Letters;2024-07

3. Solution processed zirconium oxide dielectric thin films for electronic applications;Journal of Materials Science: Materials in Electronics;2024-07

4. Synergistic integration of ZrO2-enriched reduced graphene oxide-based nanostructures for advanced photodegradation of tetracycline hydrochloride;Environmental Science and Pollution Research;2024-04-18

5. Enhanced nonlinear absorption and photoluminescence properties of Zn, Fe, Cu, V and Ni doped MoO₃ transition metal oxide thin films;Physica Scripta;2024-01-08

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