High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric-Reference-Cited by-同舟云学术

High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric

Published:2014-09-15 Issue:11 Volume:105 Page:113509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu G. X.¹,Liu A.¹,Shan F. K.¹,Meng Y.¹,Shin B. C.²,Fortunato E.³,Martins R.³

Affiliation:

1. College of Physics and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China

2. Electronic Ceramics Center, Dong-Eui University, Busan 614-714, South Korea

3. Department of Materials Science/CENIMAT-I3N, Faculty of Science and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference32 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors

4. Synergistic Approach to High-Performance Oxide Thin Film Transistors Using a Bilayer Channel Architecture

5. High-Performance InTiZnO Thin-Film Transistors Deposited by Magnetron Sputtering

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