Synergistic Approach to High-Performance Oxide Thin Film Transistors Using a Bilayer Channel Architecture-Reference-Cited by-同舟云学术

Synergistic Approach to High-Performance Oxide Thin Film Transistors Using a Bilayer Channel Architecture

Published:2013-08-07 Issue:16 Volume:5 Page:7983-7988
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yu Xinge¹²,Zhou Nanjia²,Smith Jeremy²,Lin Hui¹²,Stallings Katie²,Yu Junsheng¹,Marks Tobin J.²,Facchetti Antonio²³

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China

2. Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois, 60208, United States

3. Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois, 60077, United States

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am402065k

Reference39 articles.

1. Transparent Electronics

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

4. High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors

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