High-Performance InTiZnO Thin-Film Transistors Deposited by Magnetron Sputtering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/12/127301/pdf
Reference22 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering
3. Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator
4. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
5. High stability of amorphous hafnium-indium-zinc-oxide thin film transistor
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