Simultaneous improvement of the dielectric constant and leakage currents of ZrO2 dielectrics by incorporating a highly valent Ta5+ element

Author:

Park Bo-Eun1234,Oh Il-Kwon1234,Park Jong Seo1234,Seo Seunggi1234,Thompson David567,Kim Hyungjun1234ORCID

Affiliation:

1. School of Electrical and Electronic Engineering

2. Yonsei University

3. Seoul

4. Korea

5. Applied Materials

6. Sunnyvale

7. USA

Abstract

Ta doping into ZrO2 suppresses the oxygen vacancy formation and changes the crystal structure, leading to simultaneous improvement of dielectric constant and leakage currents.

Funder

National Research Foundation of Korea

Korea Evaluation Institute of Industrial Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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