Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1493657
Reference35 articles.
1. Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric
2. Preparation and Properties of Pyrolytic Zirconium Dioxide Films
3. Zirconium dioxide thin films deposited by ALE using zirconium tetrachloride as precursor
4. Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process
5. Properties of Ta2 O 5‐Based Dielectric Nanolaminates Deposited by Atomic Layer Epitaxy
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