Separating InGaN membranes from GaN/sapphire templates through a crystallographic-etch-limited process-Reference-Cited by-同舟云学术

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Separating InGaN membranes from GaN/sapphire templates through a crystallographic-etch-limited process

Published:2013 Issue:32 Volume:3 Page:13446
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Jiang Ren-Hao,Lin Chia-Feng,Huang Yu-Chieh,Fan Feng-Hsu,Wu Kaun-Chun,Wang Jing-Hao,Cheng Po-Fu,Yang Chung-Chieh

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/RA/C3RA41811A

Reference26 articles.

1. Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates

2. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

3. Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes

4. Materials and Mechanics for Stretchable Electronics

5. Stretchable, Curvilinear Electronics Based on Inorganic Materials

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1. Research on laser selective intelligent processing based on coaxial spectral monitoring;Advanced Laser Processing and Manufacturing VI;2022-12-16

2. Application of Laser Lift-off Technique in Flexible Electronics Manufacturing;Chinese Journal of Lasers;2020

3. Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates;Advances in Materials Science and Engineering;2015

4. Dome-shaped patterned sapphire substrate with optimized curvature to enhance the efficacy of light emitting diodes;RSC Adv.;2014-08-29

5. Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition;RSC Adv.;2014

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