Dome-shaped patterned sapphire substrate with optimized curvature to enhance the efficacy of light emitting diodes-Reference-Cited by-同舟云学术

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Dome-shaped patterned sapphire substrate with optimized curvature to enhance the efficacy of light emitting diodes

Published:2014-08-29 Issue:79 Volume:4 Page:41942-41946
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Wang Haiyan,Zhou Shizhong,Lin Zhiting,Qiao Tian,Zhong Liyi,Wang Kaicheng,Hong Xiaosong,Li Guoqiang

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA04053H

Reference27 articles.

1. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

2. Controlled nucleation and growth of nanostructures by employing surface modified GaN based layers/heterostructures as bottom layer

3. Mechanisms in thermal stress aided electroless etching of GaN grown on sapphire and approaches to vertical devices

4. Crystallography and cathodoluminescence of pyramid-like GaN nanorods epitaxially grown on a sapphire substrate

5. Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate;Materials Science in Semiconductor Processing;2024-04

2. GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth;Vacuum;2022-03

3. Effect of nucleation time on GaN layer grown on different shapes of patterned sapphire substrate;International Journal of Nanotechnology;2022

4. Development of optical-thermal coupled model for phosphor-converted LEDs;Frontiers of Optoelectronics;2019-01-22

5. Defect reduction in GaN on dome-shaped patterned-sapphire substrates;Optical Materials;2018-02

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