Mechanisms in thermal stress aided electroless etching of GaN grown on sapphire and approaches to vertical devices-Reference-Cited by-同舟云学术

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Mechanisms in thermal stress aided electroless etching of GaN grown on sapphire and approaches to vertical devices

Published:2013 Issue:27 Volume:3 Page:10934
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wang Liancheng,Liu Zhiqiang,Zheng Haiyang,Zhang Yiyun,Cheng Yan,Xie Haizhong,Rao Liqiang,Wei Tongbo,Yang Hua,Yuan Guodong,Yi Xiaoyan,Wang Guohong

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/RA/C3RA40794B

Reference36 articles.

1. Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes

2. Improved luminance intensity of InGaN–GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface

3. Room-Temperature Blue Gallium Nitride Laser Diode

4. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

5. Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface morphology of polar, semipolar and nonpolar freestanding GaN after chemical etching;Applied Surface Science;2020-05

2. Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films;Physical Chemistry Chemical Physics;2017

3. Dome-shaped patterned sapphire substrate with optimized curvature to enhance the efficacy of light emitting diodes;RSC Adv.;2014-08-29

4. Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition;RSC Adv.;2014

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