Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films-Reference-Cited by-同舟云学术

Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films

Published:2017 Issue:13 Volume:19 Page:8787-8801
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Mishra Monu¹²³⁴⁵,Gundimeda Abhiram⁵⁶³⁴,Krishna Shibin¹²³⁴⁵,Aggarwal Neha¹²³⁴⁵,Gahtori Bhasker⁵⁶³⁴,Dilawar Nita⁷⁸³⁴,Aggarwal Ved Varun⁹⁸³⁴,Singh Manju⁷⁸³⁴,Rakshit Rajib⁷⁸³⁴,Gupta Govind¹²³⁴⁵^ORCID

Affiliation:

1. Academy of Scientific and Innovative Research (AcSIR)

2. CSIR-NPL Campus

3. New Delhi-110012

4. India

5. Advanced Materials and Devices

6. CSIR-National Physical Laboratory

7. Apex Level Standards & Industrial Metrology

8. CSIR-National Physical Laboratory (CSIR-NPL)

9. Enviromental & Biomedical Metrology

Abstract

Chemical etching induced stress-relaxed & defect minimized faceted nanopyramids, flat/trigonal nanorods and porous structures on polar & non-polar GaN with reduced wettability & high current conduction.

Funder

Council for Scientific and Industrial Research

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C7CP00380C

Reference56 articles.

1. Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

2. When group-III nitrides go infrared: New properties and perspectives

3. Semiconductor Nanowires for Subwavelength Photonics Integration