Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

Abstract

Gallium Nitride Grown on Graphene Nitride semiconductor materials used in light-emitting diodes and lasers are usually grown on single-crystal sapphire substrates with intermediate buffer layers. Instead, Chung et al. (p. 655 ) used graphene as a substrate for gallium nitride growth and found that nucleation of the gallium nitride layers was enhanced by first depositing zinc oxide, which grew as vertical nanowalls on the graphene. The gallium nitride layers displayed strong photo- and electroluminescence and, even better, the layers could be transferred to flexible substrates such as plastic.