Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition-Reference-Cited by-同舟云学术

Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition

Published:2014 Issue:75 Volume:4 Page:39651-39656
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Wang Wenliang¹²³,Liu Zuolian¹²³,Yang Weijia¹²³,Lin Yunhao¹²³,Zhou Shizhong¹²³,Qian Huirong¹²³,Wang Haiyan¹²³,Lin Zhiting¹²³,Li Guoqiang¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510640, China

4. Department of Electronic Materials

5. School of Materials Science and Engineering

Abstract

High-quality GaN films with sharp and abrupt interfaces have been achieved on nitrided α-Al₂O₃ substrates by pulsed laser deposition. The effect of nitridation on the properties and the growth mechanism of GaN films have been carefully studied.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA06070A

Reference50 articles.

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