Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2749866
Reference8 articles.
1. Enhanced performance of an InGaN–GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate
2. Optical Process for Liftoff of Group III-Nitride Films
3. Damage-free separation of GaN thin films from sapphire substrates
4. Enhanced Light Output in Double Roughened GaN Light-Emitting Diodes via Various Texturing Treatments of Undoped-GaN Layer
5. Dependence of leakage current on dislocations in GaN-based light-emitting diodes
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